features trenchfet power mosfet ultra-low r ss(on) esd protected: 4000 v new micro foot chipscale packaging reduces footprint area profile (0.62 mm) and on-resistance per footprint area applications battery protection circuit ? 1-2 cell li+/lip battery pack for portable devices si8900edb vishay siliconix new product document number: 71830 s-20217?rev. a, 01-apr-02 www.vishay.com 1 bi-directional n-channel 20-v (d-s) mosfet product summary v ss (v) r ss(on) ( ) i ss (a) 0.024 @ v gs = 4.5 v 7 0.026 @ v gs = 3.7 v 6.8 20 0.034 @ v gs = 2.5 v 5.0 0.40 @ v gs = 1.8 v 5.5 g 2 s 2 g 1 s 1 n-channel 4 k 4 k micro foot device marking: 8900e = p/n code xxx = date/lot traceability code s 2 s 2 s 2 s 2 6 7 bump side view g 2 g 1 5 4 8 9 s 1 s 1 3 10 s 1 s 1 2 1 backside view 8900e xxx pin 1 identifier absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs steady state unit drain-source voltage v ss 20 gate-source voltage v gs 12 v a t a = 25 c 7 5.4 continuous drain current (t j = 150 c) a t a = 85 c i ss 5.1 3.9 a pulsed drain current i sm 10 t a = 25 c 1.8 1 maximum power dissipation a t a = 85 c p d 0.9 0.5 w operating junction and storage temperature range t j , t stg ?55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 5 sec 55 70 maximum junction-to-ambient a steady state r thja 95 120 c/w maximum junction-to-foot b steady state r thjf 12 15 c/w notes a. surface mounted on 1? x 1? fr4 board. b. the foot is defined as the top surface of the package.
si8900edb vishay siliconix new product www.vishay.com 2 document number: 71830 s-20217 ? rev. a, 01-apr-02 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ss = v gs , i d = 250 a 0.45 1.0 v v ss = 0 v, v gs = 4.5 v 4 a gate-body leakage i gss v ss = 0 v, v gs = 12 v 10 ma v ss = 16 v, v gs = 0 v 1 c 5 a on-state drain current a i ss(on) v ss = 5 v, v gs = 4.5 v 5 a v gs = 4.5 v, i ss = 1 a 0.020 0.024 v gs = 3.7 v, i ss = 1 a 0.022 0.026 v gs = 1.8 v, i ss = 1 a 0.032 0.40 forward transconductance a g fs v ss = 10 v, i ss = 1 a 31 s dynamic b turn-on delay time t d(on) 3 5 rise time t r v ss = 10 v, r l = 10 4.5 7 1 a, v gen = 4.5 v, r g = 6 55 85 s fall time t f 15 25 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0.01 100 10,000 gate current vs. gate-source voltage 0 4 8 12 16 20 0 3 6 9 12 15 gate-current vs. gate-source voltage v gs ? gate-to-source voltage (v) 0.1 1 10 1,000 v gs ? gate-to-source voltage (v) ? gate current ( i gss a) 0 369 15 t j = 25 c t j = 150 c ? gate current (ma) i gss i gss @ 25 c (ma) 12
si8900edb vishay siliconix new product document number: 71830 s-20217 ? rev. a, 01-apr-02 www.vishay.com 3 typical characteristics (25 c unless noted) 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.01 0.02 0.03 0.04 0.05 0246810 0 2 4 6 8 10 01234 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 v gs = 5 thru 1.5 v 25 c t c = 125 c v gs = 4.5 v i d = 1 a v gs = 4.5 v v gs = 2.5 v ? 55 c output characteristics transfer characteristics on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? on-resistance ( r ds(on) ) i d ? drain current (a) on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) v gs = 1.8 v 1 v v gs = 3.7 v 0.00 0.02 0.04 0.06 0.08 0.10 012345 i d = 1 a on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v gs ? gate-to-source voltage (v) i d = 5 a ? 0.4 ? 0.3 ? 0.2 ? 0.1 ? 0.0 0.1 0.2 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j ? temperature ( c)
si8900edb vishay siliconix new product www.vishay.com 4 document number: 71830 s-20217 ? rev. a, 01-apr-02 typical characteristics (25 c unless noted) 0 5 30 power (w) single pulse power, junction-to-ambient time (sec) 20 25 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 95 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 1000 10 0.1 0.01 15 10 ? 3 10 ? 2 1 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 100 10
si8900edb vishay siliconix new product document number: 71830 s-20217 ? rev. a, 01-apr-02 www.vishay.com 5 package outline micro foot: 10bump (2 x 5, 0.8mm pitch) recommended land mark on backside of die e e 10 0.30 0.31 note 3 solder mask 0.40 8900e xxx b diamerter e d s 1 e e s 2 bump note 2 silicon a a 2 a 1 notes (unless otherwise specified): 1. laser mark on the silicon die back, coated with a thin metal. 2. bumps are eutectic solder 63/57 sn/pb. 3. non-solder mask defined copper landing pad. millimeters* inches dim min max min max a 0.600 0.650 0.0236 0.0256 a 1 0.260 0.290 0.102 0.0114 a 2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 d 4.050 4.060 0.1594 0.1598 e 1.980 2.000 0.0780 0.0787 e 0.750 0.850 0.0295 0.0335 s 1 0.430 0.450 0.0169 0.0177 s 2 0.580 0.600 0.0228 0.0236 * use millimeters as the primary measurement.
si8900edb vishay siliconix new product www.vishay.com 6 document number: 71830 s-20217 ? rev. a, 01-apr-02 carrier tape micro foot: 10bump ( 2 x 2, 0.8mm pitch) 8900e xxx 8900e xxx 8900e xxx 8900e xxx 8900e xxx 4.00 0.10 4.00 0.10 2.00 0.05 1.50 0.10 1.75 0.10 5.50 0.05 12.00 0.30 0.10 a 0 k 0 b 0 5 max 2.21 0.05 0.81 0.05 4.22 0.05 5 max 0.279 0.02 device on tape orientation notes: 1. material: black conductive polycarbonate. 2. cover tape is conductive pressure sensitive adhesive tape. resistivity 1.00e+5 /sq.; minimum removal force 31 oz. min. 3. all dimensions are in millimeters unless otherwise specified. ver a 0 b 0 k 0 reel dia. length ? 1 2.21 4.22 0.81 178 14 m approx. quantity per reel t1 3000
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